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Samsung 990 1TB M.2 2280 NVMe PCIe 4.0

Samsung 990 1TB M.2 2280 NVMe PCIe 4.0

MPN MZ-V9V1T0B/AM UPC 198957280818UPC 8806099020699

Capacity
1TB
Interface
NVMe PCIe 4.0 x4
Form factor
M.2 2280
Read / write
7,150 / 6,450 MB/s
Endurance
400 TBW
NAND
—

Best price now

$229.99

at

Near you

In stock at 30 stores nationwide.

Where to buy

Out of stock online In store at 30 of 30 · $229.99
In stock Newegg · $229.99
In stock Amazon.com · $229.99
In stock B&H Photo · $269.99
In stock 3C Expert · $289.99
Out of stock Samsung Store · $229.99

In-store stock · 30 stores

Set your ZIP to sort by distance
StorePriceStockOpen boxProduct page
MCPhoenix AZ · Open $230 19 —
MCSanta Clara CA · Open $230 18 —
MCTustin CA · Open $230 25+ —
MCDenver CO · Open $230 24 —
MCMiami FL · Open $230 12 —
MCDuluth GA · Open $230 18 $184
MCMarietta GA · Open $230 17 —
MCChicago IL · Open $230 16 —
MCWestmont IL · Open $230 16 —
MCIndianapolis IN · Open $230 13 —
MCOverland Park KS · Open $230 20 —
MCCambridge MA · Open $230 18 —
MCParkville MD · Open $230 16 —
MCRockville MD · Open $230 17 —
MCMadison Heights MI · Open $230 17 —
MCSt. Louis Park MN · Open $230 14 —
MCBrentwood MO · Open $230 19 —
MCCharlotte NC · Open $230 17 —
MCNorth Jersey NJ · Open $230 23 —
MCBrooklyn NY · Open $230 16 —
MCFlushing NY · Open $230 15 —
MCWestbury NY · Open $230 15 —
MCYonkers NY · Open $230 13 —
MCColumbus OH · Open $230 20 $184
MCMayfield Heights OH · Open $230 18 —
MCSharonville OH · Open $230 9 —
MCSt. Davids PA · Open $230 15 —
MCDallas TX · Open $230 25+ —
MCHouston TX · Open $230 25+ —
MCFairfax VA · Open $230 24 —
Price history

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Specifications

Drive

Capacity
1TB
Form factor
M.2 2280
Interface
NVMe PCIe 4.0 x4
DRAM cache
No
Controller
In-House Controller

Performance

Sequential read
7,150 MB/s
Sequential write
6,450 MB/s
Random read
700,000 IOPS
Random write
1,100,000 IOPS

Endurance

Rated writes
400 TB
Warranty
3 years

Wrong price, stock or spec? Tell us

Full spec sheet from Newegg
Model/Brand
SAMSUNG
Model/Model
MZ-V9V1T0B/AM
Model/Series
990
Details/Cache
HMB (Host Memory Buffer)
Model/Used For
Consumer
Details/Capacity
1TB
Details/Protocol
NVMe 2.0
Details/Interface
PCI-Express 4.0 x4
Model/Device Type
Internal Solid State Drive (SSD)
Details/Controller
In-House Controller
Details/Encryption
Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Details/Form Factor
M.2 2280
Details/Memory Components
Samsung V NAND
Dimensions & Weight/Depth
80.15mm
Dimensions & Weight/Width
22.15mm
Dimensions & Weight/Height
2.38mm
Dimensions & Weight/Weight
6g
Performance/4KB Random Read
Up to 700,000 IOPS
Performance/4KB Random Write
Up to 1,100,000 IOPS
Performance/Max Sequential Read
Up to 7150 MBps
Performance/Max Sequential Write
Up to 6450 MBps
Performance/Terabytes Written (TBW)
400TB
Environmental/Power Consumption (Idle)
PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Environmental/Power Consumption (Active)
Read/Write, Average: 4.0W / 3.7W
Additional Information/First Listed on Newegg
July 14, 2026
Full spec sheet from Microcenter
SKU
047084
UPC
198957280818
MTBF
1,500,000 Hours
Color
Black
Labor
3 Year Limited
Parts
3 Year Limited
Capacity
1TB
Endurance
400 TBW
Interface
PCIe Gen 4 x 4
Mfr Part#
MZ-V9V1T0B/AM
Read Speed
Up to 7,150MBps
Form Factor
M.2 2280 M Key
Write Speed
Up to 6,450MBps
Architecture
Samsung V NAND
SSD Features
256-bit AES Encryption
Random Read 4K
Up to 700,000 IOPS
Random Write 4K
Up to 1,100,000 IOPS
Box Dimensions (WxDxH)
3.90 x 5.60 x 0.90 in. (99.06 x 142.24 x 22.86 mm)
Power Usage - Read/Write
4.0 Watts / 3.7 Watts
Full spec sheet from Samsungstore
Capacity
1TB
Interface
NVMe
Form Factor
M.2 2280

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