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Samsung 990 2TB M.2 2280 NVMe PCIe 4.0

Samsung 990 2TB M.2 2280 NVMe PCIe 4.0

MPN MZ-V9V2T0B/AM UPC 198957280801

Capacity
2TB
Interface
NVMe PCIe 4.0 x4
Form factor
M.2 2280
Read / write
7,250 / 6,450 MB/s
Endurance
800 TBW
NAND
—

Best price now

$369.99

at

Near you

In stock at 30 stores nationwide.

Where to buy

In stock Amazon.com · $369.99
In stock B&H Photo · $369.99
In stock Newegg · $369.99
Out of stock online In store at 30 of 30 · $369.99
Out of stock Samsung Store · $529.99

In-store stock · 30 stores

Set your ZIP to sort by distance
StorePriceStockOpen boxProduct page
MCPhoenix AZ · Open $370 18 —
MCSanta Clara CA · Open $370 13 —
MCTustin CA · Open $370 25+ —
MCDenver CO · Open $370 25+ —
MCMiami FL · Open $370 25+ —
MCDuluth GA · Open $370 19 —
MCMarietta GA · Open $370 23 —
MCChicago IL · Open $370 19 —
MCWestmont IL · Open $370 23 —
MCIndianapolis IN · Open $370 16 —
MCOverland Park KS · Open $370 24 —
MCCambridge MA · Open $370 25 —
MCParkville MD · Open $370 17 —
MCRockville MD · Open $370 16 —
MCMadison Heights MI · Open $370 22 —
MCSt. Louis Park MN · Open $370 25+ —
MCBrentwood MO · Open $370 17 —
MCCharlotte NC · Open $370 22 —
MCNorth Jersey NJ · Open $370 25+ —
MCBrooklyn NY · Open $370 16 —
MCFlushing NY · Open $370 12 —
MCWestbury NY · Open $370 13 —
MCYonkers NY · Open $370 13 —
MCColumbus OH · Open $370 23 —
MCMayfield Heights OH · Open $370 18 —
MCSharonville OH · Open $370 20 —
MCSt. Davids PA · Open $370 21 —
MCDallas TX · Open $370 25+ —
MCHouston TX · Open $370 25+ —
MCFairfax VA · Open $370 25 —
Price history

Lowest in-stock price by retailer

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Specifications

Drive

Capacity
2TB
Form factor
M.2 2280
Interface
NVMe PCIe 4.0 x4
DRAM cache
No
Controller
In-House Controller

Performance

Sequential read
7,250 MB/s
Sequential write
6,450 MB/s
Random read
850,000 IOPS
Random write
1,200,000 IOPS

Endurance

Rated writes
800 TB
Warranty
3 years

Wrong price, stock or spec? Tell us

Full spec sheet from Newegg
Model/Brand
SAMSUNG
Model/Model
MZ-V9V2T0B/AM
Model/Series
990
Details/Cache
HMB (Host Memory Buffer)
Model/Used For
Consumer
Details/Capacity
2TB
Details/Protocol
NVMe 2.0
Details/Interface
PCI-Express 4.0 x4
Model/Device Type
Internal Solid State Drive (SSD)
Details/Controller
In-House Controller
Details/Encryption
Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Details/Form Factor
M.2 2280
Details/Memory Components
Samsung V NAND
Dimensions & Weight/Depth
80.15mm
Dimensions & Weight/Width
22.15mm
Dimensions & Weight/Height
2.38mm
Dimensions & Weight/Weight
6g
Performance/4KB Random Read
Up to 850,000 IOPS
Performance/4KB Random Write
Up to 1,200,000 IOPS
Performance/Max Sequential Read
Up to 7250 MBps
Performance/Max Sequential Write
Up to 6450 MBps
Performance/Terabytes Written (TBW)
800TB
Environmental/Power Consumption (Idle)
PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Environmental/Power Consumption (Active)
Read/Write, Average: 4.3W / 3.8W
Additional Information/First Listed on Newegg
July 14, 2026
Full spec sheet from Microcenter
SKU
047076
UPC
198957280801
MTBF
1,500,000 Hours
Color
Black
Labor
3 Year Limited
Parts
3 Year Limited
Capacity
2TB
Endurance
800 TBW
Interface
PCIe Gen 4 x 4
Mfr Part#
MZ-V9V2T0B/AM
Read Speed
Up to 7,250MBps
Form Factor
M.2 2280 M Key
Write Speed
Up to 6,450MBps
Architecture
Samsung V NAND
SSD Features
256-bit AES Encryption
Random Read 4K
Up to 850,000 IOPS
Controller Type
Samsung
Random Write 4K
Up to 1,200,000 IOPS
Power Usage - Read/Write
4.3 Watts / 3.8 Watts
Full spec sheet from Samsungstore
Capacity
1TB
Interface
NVMe
Form Factor
M.2 2280

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