860 EVO
Samsung 860 EVO 250GB M.2 2280 SATA
2 versions 250GB · SATA · M.2 2280
$130
Newegg · 3rd-party
Samsung 860 EVO 1TB M.2 2280 SATA (MZ-N6E1T0BW)
MPN MZ-N6E1T0BW UPC 8801643068714
2 versions · sold under other part numbers, each with its own page. What differs is shown.
MZ-N6E1T0BW
UPC 8801643068714
$349.99this page
WZH-TX210205-1TB
UPC 887276276687
Out of stock
- Capacity
- 1TB
- Interface
- SATA
- Form factor
- M.2 2280
- Read / write
- 550 / 520 MB/s
- Endurance
- -
- NAND
- TLC
Best price now
$349.99
at 3rd-party seller
Near you
In stock at 0 stores nationwide.
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Price history
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Specifications
Drive
- Capacity
- 1TB
- Form factor
- M.2 2280
- Interface
- SATA
- NAND
- TLC
- DRAM cache
- Yes
- Controller
- Samsung MJX
Performance
- Sequential read
- 550 MB/s
- Sequential write
- 520 MB/s
- Random read
- 1 IOPS
- Random write
- 1 IOPS
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Full spec sheet from Newegg
- Model/Brand
- SAMSUNG
- Model/Model
- MZ-N6E1T0BW
- Model/Series
- 860 EVO Series
- Details/Cache
- Samsung 1GB Low Power DDR4 SDRAM
- Model/Used For
- Consumer
- Details/Capacity
- 1TB
- Performance/MTBF
- 1,500,000 hours
- Details/Interface
- SATA III
- Model/Device Type
- Internal Solid State Drive (SSD)
- Details/Controller
- Samsung MJX
- Details/Form Factor
- M.2 2280
- Details/Memory Components
- V-NAND 3-bit MLC
- Dimensions & Weight/Depth
- 80.00mm
- Dimensions & Weight/Width
- 22.00mm
- Dimensions & Weight/Height
- 2.30mm
- Performance/4KB Random Read
- Random (QD1): Up to 10,000 IOPS Random (QD32): Up to 97,000 IOPS
- Performance/4KB Random Write
- Random (QD1): Up to 42,000 IOPS Random (QD32): Up to 88,000 IOPS
- Performance/Max Sequential Read
- Up to 550 MBps
- Performance/Max Sequential Write
- Up to 520 MBps
- Environmental/Max Shock Resistance
- 1,500G & 0.5 ms (Half sine)
- Environmental/Operating Temperature
- 0°C ~ +70°C
- Performance/Terabytes Written (TBW)
- 600TB
- Environmental/Power Consumption (Active)
- Average: 3.0W Maximum: 4.5W (Burst mode)
- Additional Information/First Listed on Newegg
- April 20, 2023
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