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Samsung 860 EVO 4TB 2.5" SATA

Samsung 860 EVO 4TB 2.5" SATA

MPN MZ-76E4T0B/AM UPC 887276231921

Capacity
4TB
Interface
SATA
Form factor
2.5"
Read / write
550 / 520 MB/s
Endurance
—
NAND
MLC

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$899.99

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In stock The Best Deals For You · $899.99
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Specifications

Drive

Capacity
4TB
Form factor
2.5"
Interface
SATA
NAND
MLC
DRAM cache
Yes
Controller
MJX

Performance

Sequential read
550 MB/s
Sequential write
520 MB/s
Random read
1 IOPS
Random write
1 IOPS

Features

Hardware encryption
Yes

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Full spec sheet from Newegg
Model/Brand
SAMSUNG
Model/Model
MZ-76E4T0B/AM
Model/Series
860 EVO Series
Details/Cache
Samsung 4GB Low Power DDR4 SDRAM
Model/Used For
Consumer
Details/Capacity
4TB
Performance/MTBF
1,500,000 hours
Details/Interface
SATA III
Features/Features
2,400 TBW Trim Support: Yes AES Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667) S.M.A.R.T. Support: Yes GC (Garbage Collection): Auto Garbage Collection Algorithm WWN Support: World Wide Name supported Device Sleep Mode Support: Yes Management SW: Magician Software for SSD management
Model/Device Type
Internal Solid State Drive (SSD)
Details/Controller
MJX
Details/Form Factor
2.5"
Details/Memory Components
V-NAND 3-bit MLC
Dimensions & Weight/Depth
100.00mm
Dimensions & Weight/Width
70.00mm
Dimensions & Weight/Height
7.00mm
Dimensions & Weight/Weight
100.00g
Performance/4KB Random Read
Random (QD1): Up to 10,000 IOPS Random (QD32): Up to 98,000 IOPS
Performance/4KB Random Write
Random (QD1): 42,000 IOPS Random (QD32): 90,000 IOPS
Performance/Max Sequential Read
Up to 550 MBps
Performance/Max Sequential Write
Up to 520 MBps
Environmental/Max Shock Resistance
1,500G & 0.5 ms (Half sine)
Environmental/Operating Temperature
0°C ~ +70°C
Environmental/Power Consumption (Active)
Average: 3.0W Maximum: 4.0W (Burst mode)
Additional Information/First Listed on Newegg
July 07, 2019

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